STW9NB90 ,N-CHANNEL 900VSTW9NB90®N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW9NB90 9 ..
STW9NC80Z ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW9NK70Z ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70Z2 2N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D ..
STW9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITCH MODE POWER SUPPLIES■ DC-AC CONVERTERS FOR ..
STW9NK95Z ,N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STWD100NPWY3F ,WatchdogAbsolute maximum ratings . 15Table 4. Operating and AC measurement conditions . . . . 16Ta ..
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
T810-600B-TR ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-800B ,Triac, 800V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
STW9NB90
N-CHANNEL 900V
STW9NB90N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247
PowerMESH MOSFET TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 9.7A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
July 1999
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW9NB902/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STW9NB903/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STW9NB904/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW9NB905/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW9NB906/8
