STW9NB80 ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 800 VDS GSV Drain ..
STW9NB90 ,N-CHANNEL 900VSTW9NB90®N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW9NB90 9 ..
STW9NC80Z ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW9NK70Z ,N-CHANNEL 700V 1 OHM 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70Z2 2N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D ..
STW9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SWITCH MODE POWER SUPPLIES■ DC-AC CONVERTERS FOR ..
STW9NK95Z ,N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
T810-600B-TR ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-800B ,Triac, 800V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
STW9NB80
N-CHANNEL 900V
1/8June 2002
STW9NB80N-CHANNEL 800V - 0.85Ω - 9.3A TO-247
PowerMESH™ MOSFET TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤9.3A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW9NB80
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW9NB80
Safe Operating Area Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STW9NB80
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
5/8
STW9NB80
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
