STW80NF55-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW81101 ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 950 - 1100 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipment ..
STW81101AT ,Multi-band RF frequency synthesizer with integrated VCOsfeatures . . . . 272/53 STW81101 Contents6.1.1 Data validity . . . . . . 276.1.2 START a ..
STW81101ATR ,Multi-band RF frequency synthesizer with integrated VCOsElectrical specifications . . . . 10Table 6. Phase noise specification . . 13Table 7. Cu ..
STW81102AT ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 1000 - 1162.5 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipm ..
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
STW80NF55-08
N-CHANNEL 55V
1/8September 2002
STW80NF55-08N-CHANNEL 55V - 0.0065Ω - 80A TO-247
STripFET™ POWER MOSFET
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS DC-AC & DC-DC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STW80NF55-08
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW80NF55-08
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STW80NF55-08
Gate Charge vs Gate-source Voltage
Tranconductance
Output Characteristics
Capacitance Variations
Tranfer Characteristics
5/8
STW80NF55-08
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STW80NF55-08
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
