STW7NA80 ,Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW7NA80 STH7NA80FIV Drain-source Voltage (V = 0 ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..
STW7NC80Z ,N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NC90Z ,N-CHANNEL 900V 1.55 OHM 6A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO220FPTO-220/D PAK/TO247V Drain-source Voltage ..
STW80NE06-10 ,N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
STW7NA80
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STW7NA80
STH7NA80FI- CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on)= 1.68Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100%AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW7NA80 STH7NA80FIVDS Drain-source Voltage (VGS=0) 800 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 800 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25o C6.5 4 A Drain Current (continuous)atTc =100o C4 2.5 A
IDM(•) Drain Current (pulsed) 26 26 A
Ptot Total DissipationatTc =25oC 150 60 W
Derating Factor 1.2 0.48 W/oC
VISO Insulation Withstand Voltage (DC) 4000 V
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulsewidth limitedby safeoperating area
TYPE VDSS RDS(on) IDSTW7NA80
STH7NA80FI
800V
800V
< 1.9 Ω
< 1.9 Ω
6.5A
October 1998
TO-247 ISOWATT21823
1/10
THERMAL DATA
TO-247 ISOWATT218Rthj-case Thermal Resistance Junction-case Max 0.83 2.08 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%)
6.3 A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
320 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS=0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc= 100oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 30V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. UnitVGS(th) Gate Threshold Voltage VDS =VGS ID= 250 μA2.25 3 3.75 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID= 3.5A 1.68 1.9 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =3.5A 4.5 6.3 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS=0 1330
STW7NA80-STH7NA80FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)
Turn-on Time
Rise Time
VDD =400V ID= 3.5A =47 Ω VGS =10V
(see test circuit, figure3)
(di/dt)on Turn-on Current Slope VDD =640V ID =7A =47 Ω VGS =10V
(see test circuit, figure5)
170 A/μs
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 640V ID =7A VGS =10V 58 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unittr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =640V ID =6A =47 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)Forward On Voltage ISD =7A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =7A di/dt= 100 A/μs
VDD= 100V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Areafor TO-247 Safe Operating Areafor ISOWATT218
STW7NA80-STH7NA80FI3/10
Thermal Impedancefor TO-247
Derating Curvefor TO-247
Output Characteristics
Thermal Impedancefor ISOWATT218
Derating Curvefor ISOWATT218
Transfer Characteristics
STW7NA80-STH7NA80FI4/10
Transconductance
Gate Chargevs Gate-sourceVoltage
Normalized Gate Threshold Voltagevs
Temperature
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistancevs Temperature
STW7NA80-STH7NA80FI5/10
Turn-on Current Slope
Cross-over Time
Accidental Overload Area
Turn-off Drain-source Voltage Slope
Switching Safe Operating Area
Source-drainDiode Forward Characteristics
STW7NA80-STH7NA80FI6/10
