STW7NA100 ,Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTW7NA10 ..
STW7NA80 ,Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW7NA80 STH7NA80FIV Drain-source Voltage (V = 0 ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..
STW7NC80Z ,N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NC90Z ,N-CHANNEL 900V 1.55 OHM 6A TO-247 ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
STW7NK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO220FPTO-220/D PAK/TO247V Drain-source Voltage ..
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..
STW7NA100
N
STW7NA100
STH7NA100FIN - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
March 1998
1/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW7NA100-STH7NA100FI2/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STW7NA100-STH7NA100FI3/6
STW7NA100-STH7NA100FI4/6
STW7NA100-STH7NA100FI5/6
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STW7NA100-STH7NA100FI6/6
