IC Phoenix
 
Home ›  SS113 > STW77N65M5,N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247
STW77N65M5 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STW77N65M5STN/a3600avaiN-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247


STW77N65M5 ,N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW7N95K3 ,N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFETElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 4. On /off statesSymbol P ..
STW7NA100 ,Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTW7NA10 ..
STW7NA80 ,Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW7NA80 STH7NA80FIV Drain-source Voltage (V = 0 ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..
STW7NC80Z ,N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810--600B-TR ,Triac, 600V, 8Aapplications such as static relays, heatingA2regulation, induction motor starting circuits... or fo ..


STW77N65M5
N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247
February 2011 Doc ID 15322 Rev 3 1/14
STW77N65M5

N-channel 650 V , 0.033 Ω , 69 A, MDmesh™ V Power MOSFET
TO-247
Features
Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Application

Switching applications
Description

This device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram


Table 1. Device summary
Contents STW77N65M5
2/14 Doc ID 15322 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW77N65M5 Electrical ratings
Doc ID 15322 Rev 3 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Pulse width limited by safe operating area ISD ≤ 69 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V
Table 3. Thermal data
Electrical characteristics STW77N65M5
4/14 Doc ID 15322 Rev 3
2 Electrical characteristics

(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic
Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
STW77N65M5 Electrical characteristics
Doc ID 15322 Rev 3 5/14
Table 6. Switching times
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED