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Partno	Mfg	Dc	Qty	Available	Descript
STW75NF30	ST	N/a	15	avai	N-channel 300 V, 0.037 惟, 60 A, TO-247 low gate charge STripFET蛺2;2; Power MOSFET

STW75NF30 ,N-channel 300 V, 0.037 惟, 60 A, TO-247 low gate charge STripFET蛺2;2; Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STW77N65M5 ,N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW7N95K3 ,N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFETElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 4. On /off statesSymbol P ..
STW7NA100 ,Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTW7NA10 ..
STW7NA80 ,Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW7NA80 STH7NA80FIV Drain-source Voltage (V = 0 ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

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STW75NF30
N-channel 300 V, 0.037 惟, 60 A, TO-247 low gate charge STripFET蛺2;2; Power MOSFET
July 2008 Rev 3 1/12
STW75NF30
N-channel 300 V , 0.037 Ω , 60 A, TO-247
low gate charge ST ripFET™ Power MOSFET
Features Exceptional dv/dt capability Low gate charge 100% Avalanche tested
Application Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters
Figure 1. Internal schematic diagram

Table 1. Device summary
Contents STW75NF30
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Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW75NF30 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 60A, di/dt ≤ 200A/µs, VDD ≤ 80% V(BR)DSS
Table 2. Thermal resistance
Table 3. Avalanche characteristics
Electrical characteristics STW75NF30
4/12
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STW75NF30 Electrical characteristics
5/12
Table 6. Switching times
Table 7. Source drain diode Pulse with limited by maximum temperature Pulsed: pulse duration = 300µs, duty cycle 1.5%