STW60N10 ,NSTH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH60N10 1 ..
STW6NA80 ,NSTW6NA80STH6NA80FI®N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE ..
STW6NB100 ,NSTW6NB100®N - CHANNEL 1000V - 2.3Ω - 5.4A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW6NB10 ..
STW6NB90 ,NSTW6NB90®N - CHANNEL 900V - 1.7Ω - 6.3A - TO-247PowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STW70N10F4 ,N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off state ..
STW75NF30 ,N-channel 300 V, 0.037 惟, 60 A, TO-247 low gate charge STripFET蛺2;2; Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW60N10
N
STH60N10/FI
STW60N10N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
May 1993
ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area
1/11
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STH60N10/FI STW60N102/11
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218
STH60N10/FI STW60N103/11
Thermal Impedeance For TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Output Characteristics
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
STH60N10/FI STW60N104/11
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STH60N10/FI STW60N105/11
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STH60N10/FI STW60N106/11
