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STW55NM60ND
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
December 2012 Doc ID 14169 Rev 3 1/12
STW55NM60NDN-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET
(with fast diode) in a TO-247 package
Datasheet — production data
Features The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
Application Switching applications
DescriptionThis FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
Table 1. Device summary
Contents STW55NM60ND2/12 Doc ID 14169 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW55NM60ND Electrical ratings
Doc ID 14169 Rev 3 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 51 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STW55NM60ND
4/12 Doc ID 14169 Rev 3
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states Characteristic value at turn off on inductive load.
Table 6. Dynamic Pulsed: pulse duration= 300 μs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STW55NM60ND Electrical characteristics
Doc ID 14169 Rev 3 5/12
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Electrical characteristics STW55NM60ND
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 6. Transconductance Figure 7. Static drain-source on-resistance
