STW55NM60N ,N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
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STW55NM60N
N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247
July 2008 Rev 4 1/12
STW55NM60NN-channel 600 V , 0.047 Ω, 51 A, MDmesh™ II Power MOSFET
TO-247
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application Switching applications
DescriptionThis series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STW55NM60N2/12
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW55NM60N Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 51 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STW55NM60N
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states Characteristic value at turn off on inductive load
Table 6. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
STW55NM60N Electrical characteristics
5/12
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Electrical characteristics STW55NM60N
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
