STW54NK30Z ,N-CHANNEL 300VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 300 VDS GSV Drain ..
STW55NE10 ,N-CHANNEL 100VSTW55NE10® N - CHANNEL 100V - 0.021Ω - 55A - TO247STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DST ..
STW55NM50N , N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247
STW55NM60N ,N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW55NM60ND ,N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)Electrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STW5NA90 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW5NA90STH5NA90FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSPRELIMINARY DATATYPE V R IDSS DS ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW54NK30Z
N-CHANNEL 300V
1/10February 2005
STW54NK30ZN-CHANNEL 300V - 0.052Ω - 54A TO-247
Zener-Protected SuperMESH™ MOSFET
Rev. 1
STW54NK30Z2/10
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤54A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/10
STW54NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STW54NK30Z4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 8: Static Drain-source On Resistance
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STW54NK30Z
Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized BVdss vs Temperature
STW54NK30Z6/10
Figure 15: Avalanche Energy vs Starting Tj
