STW52NK25Z ,N-CHANNEL 250V-0.033Ohm-52A TO-247 Zener-Protected SuperMESH™MOSFETFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTW52NK25Z 250 V < 0.045 Ω 52 A 300 W
STW52NK25Z
N-CHANNEL 250V-0.033Ohm-52A TO-247 Zener-Protected SuperMESH™MOSFET
1/10November 2004
STW52NK25ZN-CHANNEL 250V - 0.033Ω - 52A TO-247
Zener-Protected SuperMESH™ MOSFET
Rev. 2
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Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤52A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized BVdss vs Temperature
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Figure 15: Avalanche Energy vs Starting Tj
