STW47NM50 ,N-CHANNEL 500 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW4810CHDR/LF , Power management for multimedia processors
STW48NM60N ,N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified).CASETable 4. On/off statesSymbol P ..
STW5093CYL ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDBLOCK DIAGRAMREMINMIC PREAMP REN,RLM,ROI,RDL REMOCONMIC AMP0/20dBMIC3- REMOUT0 -> 22.5+ MUTE1.5dB S ..
STW5093CYLT ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDFUNCTIONAL DESCRIPTION1.1 DEVICE OPERATION1.1.1 Power on initialization:When power is first applied ..
STW5093CYLT ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDapplications (see STw5093 Power Supply Notes).11 MIC2+ Second Positive high impedance input to tran ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW47NM50
N-CHANNEL 500 V
1/6
ADVANCED DATAJanuary 2003
STW47NM50N-CHANNEL 500V- 0.065Ω -45A TO-247
MDmesh™Power MOSFET
(1)ISD ≤45A, di/dt ≤400A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX. TYPICAL RDS(on)= 0.065Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar competition’s products.
APPLICATIONSThe MDmesh™ familyis very suitablefor increasing
power densityof high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
STW47NM502/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300μs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
3/6
STW47NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration= 300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STW47NM504/6
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
5/6
STW47NM50
STW47NM506/6
