STW45NM50FD ,N-CHANNEL 500V 0.09 OHM 45A TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW45NM60 ,N-CHANNEL 600V 0.09 OHM 45A TO-247 MDMESH POWER MOSFETSTW45NM60N-CHANNEL 600V - 0.09Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM60 600V ..
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STW5093CYL ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDBLOCK DIAGRAMREMINMIC PREAMP REN,RLM,ROI,RDL REMOCONMIC AMP0/20dBMIC3- REMOUT0 -> 22.5+ MUTE1.5dB S ..
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T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW45NM50FD
N-CHANNEL 500V 0.09 OHM 45A TO-247 FDMESH POWER MOSFET
1/8June 2002
STW45NM50FDN-CHANNEL 500V - 0.07Ω - 45A TO-247
FDmesh™Power MOSFET (With FAST DIODE) TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD ≤45A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW45NM50FD
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
3/8
STW45NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Safe Operating Area Thermal Impedence
STW45NM50FD
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
Transconductance
Output Characteristics Transfer Characteristics
STW45NM50FD
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STW45NM50FD
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
