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Partno	Mfg	Dc	Qty	Available	Descript
STW43NM60ND	ST	N/a	1044	avai	N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package

STW43NM60ND ,N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STW45NM50 ,N-CHANNEL 500VSTW45NM50N-CHANNEL 500V - 0.08Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM50 500V ..
STW45NM50FD ,N-CHANNEL 500V 0.09 OHM 45A TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW45NM60 ,N-CHANNEL 600V 0.09 OHM 45A TO-247 MDMESH POWER MOSFETSTW45NM60N-CHANNEL 600V - 0.09Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM60 600V ..
STW47NM50 ,N-CHANNEL 500 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
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T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

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STW43NM60ND
N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package
February 2011 Doc ID 14402 Rev 4 1/13
STW43NM60ND
N-channel 600 V , 0.075 Ω , 35 A TO-247
FDmesh™ Power MOSFET (with fast diode)
Features The worldwide best RDS(on)*area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities.
Application Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.

Table 1. Device summary
Contents STW43NM60ND
2/13 Doc ID 14402 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW43NM60ND Electrical ratings
Doc ID 14402 Rev 4 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 35 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STW43NM60ND
4/13 Doc ID 14402 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
STW43NM60ND Electrical characteristics
Doc ID 14402 Rev 4 5/13
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STW43NM60ND
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STW43NM60ND Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature