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Partno	Mfg	Dc	Qty	Available	Descript
STW34NB20	ST	N/a	12000	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STW34NB20. \|STW34NB20	ST	N/a	16	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

STW34NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW34NB20. ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW38NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW38NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS(on) DSTW38N ..
STW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)caseTable 5. On /off statesSymbol P ..
STW40N20 ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP40N20 200 V < 0.045 Ω 40 A 160 WSTW40N20 200 ..
STW40NF20 ,N-channel 200VElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

STW34NB20-STW34NB20.
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STW34NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET TYPICAL RDS(on) = 0.062 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING
January 1998
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤34A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW34NB20
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STW34NB20
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STW34NB20
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW34NB20
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW34NB20
6/8

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