STW32N65M5 ,N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW34NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW34NB20. ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW38NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW38NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS(on) DSTW38N ..
STW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)caseTable 5. On /off statesSymbol P ..
STW40N20 ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP40N20 200 V < 0.045 Ω 40 A 160 WSTW40N20 200 ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW32N65M5
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-220FP
October 2011 Doc ID 15316 Rev 4 1/22
STB32N65M5, STF32N65M5, STI32N65M5
STP32N65M5, STW32N65M5N-channel 650 V , 0.095 Ω , 24 A, MDmesh™ V Power MOSFET
in D²P AK, I²P AK, TO-220FP , TO-220, TO-247
Features Worldwide best R DS(on) * area Higher V DSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Applications Switching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W32N65M52/22 Doc ID 15316 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB/F/I/P/W32N65M5 Electrical ratings
Doc ID 15316 Rev 4 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 24 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W32N65M5
4/22 Doc ID 15316 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
STB/F/I/P/W32N65M5 Electrical characteristics
Doc ID 15316 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
