STW30NM60D ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW30NM60N , N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STW32N65M5 ,N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW34NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW34NB20. ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW38NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW38NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATA TYPE V R IDSS DS(on) DSTW38N ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW30NM60D
N-CHANNEL 600V
1/9June 2004
STW30NM60DN-CHANNEL 600V - 0.125Ω - 30A TO-247
Fast Diode MDmesh™ MOSFET
Rev. 3
STW30NM60D2/9
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤30A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
3/9
STW30NM60D
Table 7: Dynamic
Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STW30NM60D4/9
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 8: Static Drain-source On Resistance
5/9
STW30NM60D
Figure 9: Gate Charge vs Gate-source Voltage
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
STW30NM60D6/9
Figure 14: Unclamped Inductive Load Test Cir-
cuit
Figure 16: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 17: Unclamped Inductive Wafeform
Figure 18: Gate Charge Test Circuit
