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Partno	Mfg	Dc	Qty	Available	Descript
STW30NF20	ST	N/a	1023	avai	N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFET

STW30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STW30NM60D ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW30NM60N , N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STW32N65M5 ,N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW34NB20 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
STW34NB20. ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTW34NB20N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW34NB20 200 V < 0.07 ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

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STW30NF20
N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFET
October 2007 Rev 2 1/16
STP30NF20 - STB30NF20
STW30NF20
N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2 PAK
Low gate charge ST ripFET™ Power MOSFET
Features Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Very low intrinsic capacitances
Application Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Figure 1. Internal schematic diagram

Table 1. Device summary
Contents STP30NF20 - STW30NF20 - STB30NF20
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Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP30NF20 - STW30NF20 - STB30NF20 Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 30A, di/dt ≤ 200A/µs, VDD = 80%V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche data
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5%
STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics
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Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-247 Figure 3. Thermal impedance for TO-247
Figure 4. Safe operating area for TO-220/
D²PAK
Figure 5. Thermal impedance for TO-220/
D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics
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Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20
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Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature