STW29NK50ZD ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAKTO-220FPTO-247, I²PAKV Gate-source v ..
STW30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STW30NM60D ,N-CHANNEL 600VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW30NM60N , N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STW32N65M5 ,N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW29NK50ZD
N-CHANNEL 500V
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PRODUCT PREVIEWDecember 2004
STW29NK50ZDN-CHANNEL 500 V - 0.11Ω - 29A TO-247
Fast Diode SuperMESH™ MOSFET
Rev. 2
STW29NK50ZD2/7
Table 3: Absolute Maximum ratings(*) Pulse width limited by safe operating area
(1) ISD≤ 29 A, di/dt≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ≤ TJMAX
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/7
STW29NK50ZD
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
STW29NK50ZD4/7
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 6: Unclamped Inductive Wafeform
Figure 7: Gate Charge Test Circuit
STW29NK50ZD6/7
Table 10: Revision History
