STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW29NK50Z ,N-CHANNEL 500 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 500 VV Drain ..
STW29NK50ZD ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STW30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAKTO-220FPTO-247, I²PAKV Gate-source v ..
STW30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW26NM60ND
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
November 2013 DocID025283 Rev 1 1/23
STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP , TO-220 and TO-247 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Applications Switching applications
DescriptionThese FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Table 1. Device summary
Contents STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND2/23 DocID025283 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID025283 Rev 1 3/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS VDS ≤ 480 V
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu
Electrical ratings STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
4/23 DocID025283 Rev 1
Table 4. Avalanche characteristics
DocID025283 Rev 1 5/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical characteristics
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
