STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STW26NM60 ,N-CHANNEL 600VSTW26NM60N-CHANNEL 600V - 0.125Ω - 26A TO-247Zener-Protected MDmesh™Power MOSFETTYPE V R IDSS DS(on ..
STW26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW26NM60ND ,N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STW28NK60Z ,N-CHANNEL 600V 0.155 OHM 27A TO-247 Zener-Protected SuperMesh MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STW29NK50Z ,N-CHANNEL 500 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 500 VV Drain ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW26NM50
N-CHANNEL 500V
1/8February 2003
STW26NM50N-CHANNEL 500V- 0.10Ω -26A TO-247
Zener-Protected MDmesh™Power MOSFET TYPICAL RDS(on)= 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar competition’s products.
APPLICATIONSThe MDmesh™ familyis very suitablefor increasing
power densityof high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
STW26NM502/8
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤26A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/8
STW26NM50
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STW26NM504/8
Safe Operating Area For TO-247
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
5/8
STW26NM50
Capacitance VariationsGate Chargevs Gate-source Voltage
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Source-drain Diode Forward Characteristics
STW26NM506/8
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
