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Partno	Mfg	Dc	Qty	Available	Descript
STW23NM60ND	ST	N/a	265	avai	N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247

STW23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
STW24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STW25NM50N ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
STW25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 6: On /OffSymbol Parameter ..
STW26NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STW26NM60 ,N-CHANNEL 600VSTW26NM60N-CHANNEL 600V - 0.125Ω - 26A TO-247Zener-Protected MDmesh™Power MOSFETTYPE V R IDSS DS(on ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..

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STW23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247
December 2012 Doc ID 14367 Rev 4 1/22
STB23NM60ND, STF23NM60ND,
STP23NM60ND, STW23NM60ND
N-channel 600 V , 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) in D²P AK, TO-220FP , TO-220 and TO-247 packages
Datasheet — production data
Features The worldwide best RDS(on) * area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
Applications Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.

Table 1. Device summary
Contents STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
2/22 Doc ID 14367 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical ratings
Doc ID 14367 Rev 4 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature Pulse width limited by safe operating area ISD ≤ 19.5 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS, VDS(peak) < V(BR)DSS
Table 3. Thermal data When mounted on 1 inch² FR-4, 2 Oz copper board.
Electrical characteristics STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
4/22 Doc ID 14367 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states Characteristic value at turn off on inductive load
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical characteristics
Doc ID 14367 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%