STW220NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STW22NM60 , N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET
STW22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STW23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
STW24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247Electrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STW25NM50N ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW220NF75
N-CHANNEL 75V
1/8May 2003
STW220NF75N-CHANNEL 75V - 0.004 Ω - 120A TO-247
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED AUTOMOTIVE 42V BATTERY SYSTEM OR-ING FUNCTION
ABSOLUTE MAXIMUM RATINGS•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤120A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STW220NF75
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/8
STW220NF75SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STW220NF75Output Characteristics Transfer Characteristics
5/8
STW220NF75Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
