STW21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 packageapplicationsDescription6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode a ..
STW220NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STW22NM60 , N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET
STW22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STW23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
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T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
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T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW21N65M5
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247
May 2011 Doc ID 15427 Rev 4 1/22
STB21N65M5, STF21N65M5
STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V , 0.150 Ω , 17 A MDmesh™ V Power MOSFET
D²P AK, TO-220FP , TO-220, I²P AK, TO-247
Features Worldwide best RDS(on) * area Higher V DSS rating High dv/dt capability Excellent switching performance 100% avalanche tested
ApplicationSwitching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W21N65M52/22 Doc ID 15427 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB/F/I/P/W21N65M5 Electrical ratings
Doc ID 15427 Rev 4 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V.
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W21N65M5
4/22 Doc ID 15427 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
STB/F/I/P/W21N65M5 Electrical characteristics
Doc ID 15427 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
