STW20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFETSTW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM60 600V ..
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STW20NM60
N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFET
1/8August 2002
STW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247
MDmesh™Power MOSFET TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STW20NM60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/8
STW20NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STW20NM60
Tranfer Characteristics
Gate Charge vs Gate-source Voltage
Tranconductance
Output Characteristics
Capacitance Variations
5/8
STW20NM60
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STW20NM60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
