STW20NM50 ,N-CHANNEL 500VSTW20NM50N-CHANNEL 500V - 0.20Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM50 500V ..
STW20NM50FD ,N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFETSTW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM60 600V ..
STW20NM60FD ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETAPPLICATIONSn ZVS PHASE-SHIFT FULL BRIDGECONVERTERS FOR SMPS AND WELDINGEQUIPMENTORDERING INFORMATI ..
STW21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 packageapplicationsDescription6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode a ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW20NM50
N-CHANNEL 500V
1/8August 2002
STW20NM50N-CHANNEL 500V - 0.20Ω - 20A TO-247
MDmesh™Power MOSFET TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD ≤20A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW20NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/8
STW20NM50
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area STW20NM50
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance
Transfer CharacteristicsOutput Characteristics
5/8
STW20NM50
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STW20NM50
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
