STW20NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW20NK50Z ,N-CHANNEL 500VSTW20NK50ZN-CHANNEL 500V - 0.23Ω - 17A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwDSS ..
STW20NK70Z ,N-CHANNEL 700VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)700 VDS GSV Drain-g ..
STW20NM50 ,N-CHANNEL 500VSTW20NM50N-CHANNEL 500V - 0.20Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM50 500V ..
STW20NM50FD ,N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STW20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-247 MDMESH POWER MOSFETSTW20NM60N-CHANNEL 600V - 0.26Ω - 20A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW20NM60 600V ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STW20NC50
N-CHANNEL 500V
1/8May 2001
STW20NC50N-CHANNEL 500V - 0.22Ω - 18.4A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS SWITH MODE LOW POWER SUPPLIES
(SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤18.4A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW20NC50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW20NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STW20NC50
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage Capacitance Variations
5/8
STW20NC50
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW20NC50
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
