STW18NK80Z ,N-CHANNEL 800V 0.34 OHM 18A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STW18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247Electrical characteristics(T =25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol Pa ..
STW20NA50 ,NSTW20NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTW20NA50 500 V ..
STW20NB50 ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..
STW20NB50. ,NSTW20NB50®N - CHANNEL 500V - 0.22Ω - 20A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW20NB50 ..
STW20NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
STW18NK80Z
N-CHANNEL 800V 0.34 OHM 18A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/9July 2003
STW18NK80ZN-CHANNEL 800V- 0.34Ω -19A TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.34Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
STW18NK80Z2/9
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤19A, di/dt ≤300A/μs, VDD≤ 800V,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/9
STW18NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STW18NK80Z4/9
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer
Thermal ImpedanceSafe Operating Area
5/9
STW18NK80Z
Source-drain Diode Forward Characteristics
Capacitance VariationsGate Chargevs Gate-source Voltage
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
Normalized BVDSSvs Temperature
STW18NK80Z6/9
Maximum Avalanche Energyvs Temperature
