STW14NC50 ,N-CHANNEL 500V 0.31OHM 14A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP14NK50Z/FP, STB14NK50ZSTB14NK50Z-1, STW14NK50Z2 2N-CHANNEL500V-0.34Ω-14ATO-220/FP/D PAK/I PAK/TO ..
STW14NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STW14NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STW150NF55 ,N-CHANNEL 55VSTB150NF55 STP150NF55STW150NF55N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247STripFET™ II POWER ..
STW15NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH ..
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T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
STW14NC50
N-CHANNEL 500V 0.31OHM 14A TO-247 POWERMESH II MOSFET
1/8May 2001
STW14NC50N-CHANNEL 500V - 0.31Ω - 14A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤14A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW14NC50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW14NC50
Safe Operating Area Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STW14NC50
Capacitance VariationsGate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On ResistanceTransconductance
Output Characteristics
5/8
STW14NC50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
