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Partno	Mfg	Dc	Qty	Available	Descript
STW12NK95Z	ST	N/a	8400	avai	N-CHANNEL 950V

STW12NK95Z ,N-CHANNEL 950VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 950 VDS GSV Drain ..
STW13NB60 ,NSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STW13NK60Z ,N-CHANNEL 600VSTP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60Z2 2N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D PAK/I PAK/ ..
STW13NK80Z ,N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
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STW12NK95Z
N-CHANNEL 950V
August 2006 Rev 2 1/14
STW11NK100Z
STW12NK95Z
N-channel 950V - 0.69Ω - 10A - TO-247
Zener - Protected SuperMESH™ PowerMOSFET
General features Gate charge minimized 100% avalanche tested Extremely high dv/dt capability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications Switching application
Internal schematic diagram

Order codes
Contents STW12NK95Z
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Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STW12NK95Z Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Table 2. Thermal data
Table 3. Avalanche characteristics
Electrical ratings STW12NK95Z
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1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 4. Gate-source zener diode
STW12NK95Z Electrical characteristics
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Electrical characteristics STW12NK95Z
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Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
STW12NK95Z Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance