STW12NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)800 VDS GSV Drain- ..
STW12NK80Z. ,N-CHANNEL 800VSTW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwD ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STW12NK90Z. ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW12NK95Z ,N-CHANNEL 950VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 950 VDS GSV Drain ..
STW13NB60 ,NSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
T77V1D10-12 , Potter & Brumfield
T77V1D10-12 , Potter & Brumfield
T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
STW12NK80Z-STW12NK80Z.
N-CHANNEL 800V
1/9October 2002
STW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
STW12NK80Z
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤10.5A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/9
STW12NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STW12NK80Z
Static Drain-source On ResistanceTransconductance
Thermal Impedance For TO-247Safe Operating Area For TO-247
Transfer CharacteristicsOutput Characteristics
5/9
STW12NK80Z
Gate Charge vs Gate-source Voltage
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance Variations
STW12NK80Z
Maximum Avalanche Energy vs Temperature
