STW12NC60 ,N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STW12NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)800 VDS GSV Drain- ..
STW12NK80Z. ,N-CHANNEL 800VSTW12NK80ZN-CHANNEL 800V - 0.65Ω - 10.5A TO-247Zener-Protected SuperMESH™Power MOSFETTYPE V R I PwD ..
STW12NK90Z ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTW12NK90ZN-CHANNEL 900V - 0.72Ω -11A TO-247Zener-Protected SuperMESH™ Power MOSFETTYPE V R I PwDSS ..
STW12NK90Z. ,N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW12NK95Z ,N-CHANNEL 950VAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 950 VDS GSV Drain ..
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T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
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STW12NC60
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
1/8June 2000
STW12NC60N-CHANNEL 600V - 0.48Ω - 12A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤11A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STW12NC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STW12NC60
Thermal ImpedanceSafe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STW12NC60
Capacitance VariationsGate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
5/8
STW12NC60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
