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STW11NK90ZSTN/a50000avaiN-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package


STW11NK90Z ,N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
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STW11NK90Z
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
July 2006 Rev 2 1/12
STW11NK90Z

N-channel 900V - 0.82Ω - 9.2A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability
Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Applications
Switching application
Internal schematic diagram


Order codes
Contents STW11NK90Z
2/12
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW11NK90Z Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Pulse width limited by safe operating area ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS
Table 2. Thermal resistance
Table 3. Avalanche data
Electrical characteristics STW11NK90Z
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2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Pulsed: pulse duration=300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Table 6. Switching times
STW11NK90Z Electrical characteristics
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Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8. Gate-source zener diode
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Electrical characteristics STW11NK90Z
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized B VDSS vs temperature Figure 6. Static drain-source on resistance
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