STW11NB80 ,N-CHANNEL 800VSTW11NB80®N-CHANNEL 800V - 0.65Ω - 11A - T0-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW11NB80 ..
STW11NK100Z ,N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)1000 VDS GSV Drain- ..
STW11NK90Z ,N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STW11NM80 ,N-CHANNEL 800 VAbsolute Maximum ratingsSymbol Parameter Value Unit2TO-220/D PAKTO-220FPTO-247V Drain-source Voltag ..
STW11NM80 ,N-CHANNEL 800 Vapplications in particular for Flybackand Forward converter topologies and for ignitioncircuits in ..
STW11NM80 ,N-CHANNEL 800 VAPPLICATIONSThe 800 V MDmesh™ family is very suitable forsingle switch
T77V1D10-12 , Potter & Brumfield
T77V1D10-12 , Potter & Brumfield
T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
STW11NB80
N-CHANNEL 800V
STW11NB80N-CHANNEL 800V - 0.65Ω - 11A - T0-247
PowerMESH MOSFET TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
July 1999
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW11NB802/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STW11NB803/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STW11NB804/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW11NB805/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW11NB806/8
