STV160NF03LT4 ,N-CHANNEL 30VSTV160NF03LN-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTV ..
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T73227 , 27 MHz VCXO Clock Generator IC
STV160NF03LT4
N-CHANNEL 30V
1/9November 2002
STV160NF03LN-CHANNEL 30V- 0.0019Ω - 160A PowerSO-10
STripFET™ POWER MOSFET
(1) Starting Tj=25°C,ID =80A,VDD =20V
(**)Limitedonly maximum junction temperature allowedby
PowerSO-10 TYPICAL RDS(on)= 0.0019Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTIONThe
STV160NF03L representsthe second gener-
ationof Application Specific STMicroelectronics
well established STripFET™ process basedona
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultralow on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This deviceis particularly suitablefor high current,
low voltage switching application where efficiency crucial
APPLICATIONS BUCK CONVERTERSIN HIGH
PERFORMANCE TELECOM AND VRMs DC- CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limitedbysafe operatingarea
STV160NF03L2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF(1)
DYNAMIC
3/9
STV160NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHINGON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs,duty cycle1.5%. Pulse width limitedbysafe operating area.
Safe Operating Area Thermal Impedance
STV160NF03L4/9
Capacitance VariationsGate Chargevs Gate-source Voltage
Output Characteristics
Tranconductance
5/9
STV160NF03LBasic Schematic For Motherboard VRM Whith
Synchronous Rectification
Source-drain
NormalizedOn Resistancevs TemperatureBasic Schematic Mosfets Switch UsedIn
Secondary SideOfa Froward Convert
STV160NF03L6/9
