STV160NF02LT4 ,N-CHANNEL 20VSTV160NF02LN-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) D ..
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STV160NF02LT4
N-CHANNEL 20V
1/8February 2004
STV160NF02LN-CHANNEL 20V- 0.0016Ω - 160A PowerSO-10
STripFET™II POWER MOSFET
(1) Starting Tj=25°C,ID =80A,VDD =20V
(**)Limitedonly maximum junction temperature allowedby
PowerSO-10 TYPICAL RDS(on)= 0.0016Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTIONThe
STV160NF02L representsthe second gener-
ationof Application Specific STMicroelectronics
well established STripFET™ process basedona
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultralow on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This deviceis particularly suitablefor high current,
low voltage switching application where efficiency crucial
APPLICATIONS BUCK CONVERTERSIN HIGH
PERFORMANCE TELECOM AND VRMs DC- CONVERTERS
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedbysafe operatingarea
STV160NF02L2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF(1)
DYNAMIC
3/8
STV160NF02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHINGON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs,duty cycle1.5%. Pulse width limitedbysafe operating area.
Safe Operating Area Thermal Impedance
STV160NF02L4/8
Gate Chargevs Gate-source Voltage Capacitance Variations
Output Characteristics
Tranconductance
5/8
STV160NF02LBasic Schematic For Motherboard VRM Whith
Synchronous Rectification
Basic Schematic Mosfets Switch UsedIn
Secondary SideOfa Froward Convert
Source-drain
NormalizedOn Resistancevs Temperature
STV160NF02L6/8
Fig.5: TestFor Inductive
Fig.4: Gate Chargetest Circuit
Fig.3: Switching
Resistive Load
