STV160NF02LAT4 ,N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF02LT4 ,N-CHANNEL 20VSTV160NF02LN-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) D ..
STV160NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF03LA ,N-CHANNEL 30V 0.0021 OHM 160A POWERSO-10 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STV160NF03LT4 ,N-CHANNEL 30VSTV160NF03LN-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTV ..
STV2050A ,AUTOMATIC MULTISCAN DIGITAL CONVERGENCE PROCESSORTable of Contents6.6 DATA TRANSFER BETWEEN RAM AND EEPROM . . . . 296.7 MASTER CLOCK FREQUENCY ..
T7289A , DS1 LINE INTERFACE
T-7290A-EL , T7290A DS1/T1/CEPT Line Interface
T7290A-EL , T7290A DS1/T1/CEPT Line Interface
T73227 , 27 MHz VCXO Clock Generator IC
T73227 , 27 MHz VCXO Clock Generator IC
T73227 , 27 MHz VCXO Clock Generator IC
STV160NF02LAT4
N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET
1/8December 2000
STV160NF02LAN-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10
STripFET™ POWER MOSFET
(1) VDD = 35V, ID = 45A, RG = 22Ω , L = 330μH, Starting Tj=25°C
(**)Limited only maximum junction temperature allowed by
PowerSO-10 TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTIONThe STV160NF02LA represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFET™ process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
Note: Marking will be STV160NF02AL
STV160NF02LA
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STV160NF02LA
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STV160NF02LA
Tranconductance
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
5/8
STV160NF02LA
Normalized On Resistance vs Temperature
Source-drain Diode Forward CharacteristicsBasic Schematic For Motherboard VRM Whith
Synchronous Rectification
Basic Schematic Mosfets Switch Used In
Secondary Side Of a Froward Convert
STV160NF02LA
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
