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STU85N3LH5
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
July 2010 Doc ID 13833 Rev 7 1/16
STD85N3LH5STP85N3LH5, STU85N3LH5N-channel 30 V , 0.0042 Ω , 80 A, DP AK, TO-220, IP AK ripFET™ V Power MOSFET
Features RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
ApplicationSwitching applications
DescriptionThis product utilizes the 5th generation of design
rules of ST’s proprietary STripFETTM technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STD85N3LH5, STP85N3LH5, STU85N3LH52/16 Doc ID 13833 Rev 7
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD85N3LH5 Electrical ratings
Doc ID 13833 Rev 7 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding Pulse width limited by safe operating area Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Table 3. Thermal resistance
Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5
4/16 Doc ID 13833 Rev 7
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STD85N3LH5 Electrical characteristics
Doc ID 13833 Rev 7 5/16
Table 6. Switching on/off (inductive load)
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5
6/16 Doc ID 13833 Rev 7
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance
STD85N3LH5 Electrical characteristics
Doc ID 13833 Rev 7 7/16
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuit STD85N3LH5, STP85N3LH5, STU85N3LH5
8/16 Doc ID 13833 Rev 7 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
