STU36NB20 ,N-CHANNEL 200V 0.052OHM 36A MAX220 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
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TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
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STU36NB20
N-CHANNEL 200V 0.052OHM 36A MAX220 POWERMESH MOSFET
1/8July 2000
STU36NB20N-CHANNEL 200V - 0.052Ω - 36A Max220
PowerMesh™ MOSFET TYPICAL RDS(on) = 0.052Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) UNINTERRUPTIBLE POWER SUPPLIES (UPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤36A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STU36NB20
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STU36NB20
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STU36NB20
Gate Charge vs Gate-source Voltage
Transconductance
Capacitance Variations
Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/8
STU36NB20
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STU36NB20
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
