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STU10NM60NSTN/a28680avaiN-channel 600 V, 0.53 Ohm, 10 A, IPAK MDmesh(TM) II Power MOSFET


STU10NM60N ,N-channel 600 V, 0.53 Ohm, 10 A, IPAK MDmesh(TM) II Power MOSFETElectrical characteristics(Tcase =25 °C unless otherwise specified)Table 5. On /off statesSymbol Pa ..
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STU10NM60N
N-channel 600 V, 0.53 Ohm, 10 A, DPAK MDmesh(TM) II Power MOSFET
July 2013 DocID15764 Rev 7 1/27
STP10NM60N, STU10NM60N

N-channel 600 V , 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP , I²PAK, TO-220 and IPAK packages
Datasheet - production data
Features
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description

These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
2/27 DocID15764 Rev 7
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DocID15764 Rev 7 3/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Electrical ratings
1 Electrical ratings

Table 2. Absolute maximum ratings
Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 10 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristicsSTD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
4/27 DocID15764 Rev 7
2 Electrical characteristics

(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Table 7. Switching times
DocID15764 Rev 7 5/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60NElectrical characteristics
Table 8. Source drain diode
Pulse width limited by safe operating area. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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