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STTH9012TV2
Ultrafast recovery
March 2006 Rev 1 1/8
STTH9012TVUltrafast recovery - 1200 V diode
Main product characteristics
Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature Insulated package:
Electrical insulation = 2500 VRMS
Capacitance = 45 pF
DescriptionThe high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
Characteristics STTH9012TV2/8
1 Characteristics When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.40 x IF(AV) + 0.0089 IF2 (RMS)
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH9012TV Characteristics 3/8
Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Characteristics STTH9012TV4/8
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 5. Reverse recovery time versus F /dt (typical values)
Figure 6. Reverse recovery charges versus F /dt (typical values)
Figure 7. Softness factor versus
dIF/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
STTH9012TV Characteristics 5/8
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Package information STTH9012TV6/8
2 Package informationEpoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOP ACK specifications are available at: .
Table 5. ISOTOP dimensions
