STTH8R04D ,Ultrafast recovery diodesFeatures and benefitsSTTH8R04D STTH8R04FP■ Very low switching losses■ High frequency and high pulse ..
STTH8R04FP , Ultrafast recovery diode
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1. GENERAL
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STTH8R04D
Ultrafast recovery diodes
March 2007 Rev 1 1/11
STTH8R04Ultrafast recovery diode
Main product characteristics
Features and benefits Very low switching losses High frequency and high pulsed current
operation High junction temperature Insulated packages TO-220AC Ins
Electrical insulation = 2500 V RMS
Capacitance = 7 pF TO-220FPAC
Electrical insulation = 1500 V RMS
Capacitance = 12 pF
DescriptionThe STTH8R04 series uses ST's new 400 V
planar Pt doping technology. The STTH8R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in through-the-hole and surface mount
packages, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
Order codes
Characteristics STTH8R042/11
1 Characteristics o evaluate the conduction losses use the following equation:
P = 0.83 x IF(AV) + 0.034 x IF2 (RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH8R04 Characteristics 3/11
Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration TO-220FPAB
Characteristics STTH8R044/11
Figure 5. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6. Reverse recovery time versus
dIF/dt (typical values)
Figure 7. Reverse recovery charges versus F /dt (typical values)
Figure 8. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, eCU =35µm)
STTH8R04 Characteristics 5/11
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 11. Forward recovery time versus dIF/dt
(typical values)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
Package information STTH8R046/11
2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC, TO-220AC Ins, TO-220FPAC) Maximum torque value: 0.70 Nm (TO-220AC, TO-220AC Ins, TO-220FPAC)
Figure 13.D2 PAK footprint (dimensions in mm)
Table 5. D2 PAK dimensions
