STTH812FP ,Ultrafast recovery -1200 V diodeapplications include industrial power supplies, motor control, and similar mission-critical systems ..
STTH8L06D ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERELECTRICAL CHARACTERISTICSSymbol Parameter Tests conditions Min. Typ. Max. UnitI Reverse leakage V ..
STTH8L06D. ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH8L06DIRG ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.STTH8L06DI STTH8L06DISTTH8L06DIRG STTH8L06DISTTH8L06G STTH8L06GSTTH8L06G-TR STTH8L06GT ..
STTH8L06FP ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingn Low reverse recovery currentn Reduces switching & condu ..
STTH8L06FP. ,TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSn Ultrafast switchingn Low reverse recovery currentn Reduces switching & condu ..
T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
T6801 ,Single-channel driver 25 mA output with thermal monitoringFeatures Input Comparator with Schmitt-trigger Characteristic Input Clamping Current Capability o ..
T6801-TAQ ,Single-channel Driver IC with Driver IC with MonitoringFeatures Input Comparator with Schmitt-trigger Characteristic Input Clamping Current Capability o ..
T6816 ,40-V dual Hexdriver with serial input controlapplications and the industrial 24-V supply.It controls up to 12 different loads via a 16-bit dataw ..
T6816 ,40-V dual Hexdriver with serial input controlFeatures• Six High-side and Six Low-side Drivers Outputs Freely Configurable as Switch, Half Brid ..
T6816 ,40-V dual Hexdriver with serial input controlapplications.Overvoltage protection is matched to the requirements of the 24-V industrial voltagean ..
STTH812D-STTH812DI-STTH812FP
Ultrafast recovery -1200 V diode
March 2006 Rev 1 1/11
STTH812Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature Insulated packages: TO-220Ins
Electrical insulation = 2500 VRMS
Capacitance = 7 pF TO-220FPAC
Electrical insulation = 2000 VRMS
Capacitance = 12 pF
DescriptionThe high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
Order codes
Characteristics STTH8122/11
1 Characteristics To evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.05 IF2 (RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameters
Table 3. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH812 Characteristics 3/11
Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
Characteristics STTH8124/11
Figure 5. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6. Reverse recovery time versus dIF/dt
(typical values)
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
Figure 8. Softness factor versus dIF/dt
(typical values)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF /dt (typical values)
STTH812 Characteristics 5/11
Figure 11. Forward recovery time versus dIF/dt
(typical values)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, ecu = 35 µm)
Package mechanical data STTH8126/11
Package mechanical dataEpoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Maximum torque value: 0.7 Nm (TO-220AC)
Table 5. T0-220AC dimensions
