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Partno	Mfg	Dc	Qty	Available	Descript
STTH803D	ST	N/a	2100	avai	HIGH FREQUENCY SECONDARY RECTIFIER

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STTH803D
HIGH FREQUENCY SECONDARY RECTIFIER
STTH803D/G
October 1999 - Ed: 5C
HIGH FREQUENCY SECONDARY RECTIFIER
Single Fast Recovery Epitaxial Diode suited for
Switch Mode Power Supply and high frequency
DC/DC converters.
Packaged in TO-220AC or D2 PAK this device is
especially intended for secondary rectification.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAJOR PRODUCTS CHARACTERISTICS
1/6
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.031 IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES
RECOVERY CHARACTERISTICS
STTH803D/G
2/6
01234 5678 9 100
P1(W)
Fig. 1: Conduction losses versus average current.
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.500.1
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values).
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration. 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence). 50 100 150 200 250 300 350 400 450 5000.00
S factor
Fig. 6: Softness factor versus dIF/dt (typical
values).
STTH803D/G
3/6
50 75 100 1250.0Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C). 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence). 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
STTH803D/G
4/6

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