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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
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STTH8003CY
HIGH FREQUENCY SECONDARY RECTIFIERS
STTH8003CYSeptember 2002-Ed:3A
HIGH FREQUENCY SECONDARY RECTIFIERS COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE. ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY. HIGH OPERATING TEMPERATURE THANKS LOW LEAKAGE CURRENT.
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAJOR PRODUCTS CHARACTERISTICSDual rectifiers suited for Switch Mode Power
Supply and high frequencyDCtoDC converters.
Packagedin Max247, this deviceis intendedfor
usein low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
DESCRIPTION
STTH8003CYPulsetest:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=0.75xIF(AV)+ 0.0062 IF(RMS)2
STATIC ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH8003CY 5 10 15 20 25 30 35 40 45 500
P(W)
Fig.1: Conduction losses versus average current
(per diode)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.21
IFM(A)
Fig.2: Forward voltage drop versus forward
current (per diode)
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig.4: Peak reverse recovery current versus
dIF/dt (90% confidence,per diode) 50 100 150 200 250 300 350 400 450 5000.0
S factor
Fig.6: Softness factor (tb/ta) versus dIF/dt
(typical values,per diode) 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt
(90% confidence,per diode)
STTH8003CY 50 75 100 1250.0
Fig.7: Relative variationof dynamic parameters
versus junctiontemperature (Reference:Tj =125°C) 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig.9: Forward recovery time versus dIF/dt
(90% confidence,per diode) 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig.8: Transient peak forward voltage versus
dIF/dt (90% confidence,per diode)
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