STTH6002CW ,HIGH EFFICIENCY ULTRAFAST DIODE®STTH6002CHIGH EFFICIENCY ULTRAFAST DIODEMAINPRODUCTCHARACTERISTICSI 2x30AF(AV)A1KV 200VRRMA2Tj(max ..
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
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STTH6002C-STTH6002CW
HIGH EFFICIENCY ULTRAFAST DIODE
STTH6002CFebruary 2004-Ed:1
HIGH EFFICIENCY ULTRAFAST DIODE
Dual centertap rectifier suitedfor Switch Mode
Power Supplies and High frequency DCto DC
converters.
Packagedin TO-247, this deviceis intendedfor
useinlow voltage, high frequency inverters, free
wheeling and polarity protection applications.
DESCRIPTION Suitedfor SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Low leakage current
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values,per diode)
MAIN PRODUCT CHARACTERISTICS
STTH6002CPulsetest:*tp= 5ms,δ <2%tp= 380µs,δ <2% evaluatethe maximum conduction lossesusethe following equation:= 0.69x IF(AV)+ 0.005IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICSWhenthe diodes1 and2are used simultaneously:Tj (diode1)= P(diode1)x Rth(j-c) (per diode)+ P(diode2)x Rth(c)
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH6002C0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
(A)M
Fig.1: Peak current versus duty cycle (per diode).
0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.4
(A)FM
Fig. 2-1: Forward voltage drop versus forward
current (typical values,per diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration.
1000 50 100 150 200
C(pF)
Fig.4: Junction capacitance versus reverse
voltage applied (typical values,per diode).
250 100 1000
(nC)rr
Fig.5: Reverse recovery charges versus dIF/dt
(typical values,per diode).
I(A)FM
Fig. 2-2: Forward voltage drop versus forward
current (maximum values,per diode).
STTH6002C 100 1000
t(ns)rr
Fig.6: Reverse recovery time versus dIF/dt
(typical values,per diode). 100 1000
I(A)RM
Fig.7: Peak reverse recovery current versus dIF/dt
(typical values,per diode).
1.4 50 75 100 125 150
rrI[T]/Q;I[T =125°C]RMjrrRMj
Fig.8: Dynamic parameters versus junction
temperature.
STTH6002CInformationfurnished isbelievedto beaccurateand reliable. However, STMicroelectronics assumes noresponsibilityfortheconsequencesof
useofsuch informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhichmay resultfrom itsuse.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
changewithout notice.This publication supersedesand replacesall information previouslysupplied. STMicroelectronics productsarenotau-
thorizedforuseas critical componentsinlife support devicesor systems without express written approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics.
All other namesarethe propertyof their respective owners. 2004 STMicroelectronics-All rights reserved.
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PACKAGE MECHANICAL DATATO-247
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