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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
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STTH5L06B-TR
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5L06D/B/FPNovember 2002-Ed:4B
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH5L06D/B/FP, whichis usingST Turbo2
600V technology,is specially suitedas boost
diodein discontinuousor critical mode power
factor corrections.
The device, availablein TO-220AC, TO-220FPAC
and DPAK,is also intendedfor useasa free
wheeling diodein power supplies and other power
switching applications.
DESCRIPTION Ultrafast switching Low reverse recovery current Reduces switching& conduction losses Low thermal resistance
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH5L06D/B/FP evaluatethe maximum conduction lossesusethe following equation:
P=0.89xIF(AV)+ 0.033IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICSP(W)
Fig.1: Conduction losses versusaverage current.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
(A)FM
Fig.2: Forward voltage drop versus forward
current.
STTH5L06D/B/FP1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig. 3-1: Relative variationof thermal impedance
junctionto case versus pulse duration (TO-220AC,
DPAK).
1000 10 2030 405060 7080 90 100
(ns)rr
Fig.5: Reverse recovery time versus dIF/dt
(90% confidence). 10 20304050 607080 90 100
(A)RM
Fig.4: Peak reverse recovery current versus dIF/dt
(90% confidence).
500 1020 3040 5060 7080 90 100
(nC)rr
Fig.6: Reverse recovery charges versus dIF/dt
(90% confidence).
Z/Rth(j-c) th(j-c)1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Fig. 3-2: Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220FPAC). 102030405060708090 100
2.4
S factor
Fig.7: Softness factor versus dIF/dt (typical
values).
STTH5L06D/B/FP1.25 50 75 100 125
Fig. 8: Relative variations of dynamic
parameters versus junction temperature. 20 40 60 80 100 120 140 160 180 200
(V)FP
Fig.9: Transient peak forward voltage versus
dIF/dt (90% confidence).
200 20 40 60 80 100 120 140 160 180 200
(ns)fr
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
100 10 100 1000
C(pF)
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values). 2 4 6 8 1012141618 20
(°C/W)th(j-a)
Fig. 12: Thermal resistance junctionto ambient
versuscopper surface under tab(epoxy printed circuit
board FR4, copper thickness: 35μm) (DPAK).
STTH5L06D/B/FP
PACKAGE MECHANICAL DATADPAK
FOOTPRINT
STTH5L06D/B/FP
PACKAGE MECHANICAL DATATO-220FPAC
