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STTH506DTI ,TANDEM 600V HYPERFAST BOOST DIODE®STTH506DTITandem 600V HYPERFAST BOOST DIODEMAJOR PRODUCTS CHARACTERISTICS12I 5AF(AV)V 600 VRRMTj ( ..
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STTH512D ,Ultrafast recoveryFeaturesV 1200 VRRM• Ultrafast, soft recoveryT (max) 175 °Cj• Very low conduction and switching los ..
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T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
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STTH506D-STTH506DTI
TANDEM 600V HYPERFAST BOOST DIODE
STTH506DTIOctober 2003-Ed:2A
Tandem 600V HYPERFAST BOOST DIODE
The TURBOSWITCH “H”is an ultra high
performance diode composedof two 300V dicein
series. TURBOSWITCH“H” family drastically cuts
lossesin the associated MOSFET when runat
high dIF/dt.
DESCRIPTION ESPECIALLY SUITEDAS BOOST DIODEIN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZINGOF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMONOR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN Package Capacitance: C=7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAJOR PRODUCTS CHARACTERISTICS
STTH506DTI
THERMAL AND POWER DATAPulsetest:*tp= 100ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=1.7xIF(AV)+ 0.14IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
TURN-ON SWITCHING CHARACTERISTICS
STTH506DTI
P(W)Fig.1: Conduction losses versus averagecurrent.
(A)FM100 2345 678
Fig.2: Forward voltage drop versus forward
current.
Z/Rth(j-c) th(j-c)1.E-03 1.E-02 1.E-01 1.E+00
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration. 50 100 150 200 250 300 350 400 450 500
(ns)rr
Fig.5: Reverse recovery time versus dIF/dt
(typical values). 50 100 150 200 250 300 350 400 450 500
(A)RM
Fig.4: Peak reverse recovery current versus
dIF/dt (typical values).
100 50 100 150 200 250 300 350 400 450 500
(nC)rr
Fig.6: Reverse recovery charges versus dIF/dt
(typical values).
STTH506TDI2.50 50 75 100 125
Fig.8: Relative variationof dynamic parameters
versus junction temperature(reference:Tj= 125°C).
(V)FP 50 100 150 200 250 300 350 400 450 500
Fig.9: Transient peak forward voltage versus
dIF/dt (typical values).
(ns)fr200 100 200 300 400 500
Fig. 10: Forward recovery time versus dIF/dt
(typical values).
0.60 50 100 150 200 250 300 350 400 450 500
Fig.7: Reverse recovery softness factor versus
dIF/dt (typical values).
C(pF)100 10 100 1000
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
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