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T6668 ,-0.3 to +6.0V; V(in/out): -0.3 to +0.3V; CMOS LSI for voice recording and reproducing using the ADM systemELIE D " '3tP17iiYH1 DDELI‘ILIE Ell: .TOSB T6668_1||
TOSHIBA (UC/UP)
1. GENERAL
The T6668 is ..
STTH4R02SY-STTH4R02UY
Automotive Ultrafast recovery diode
December 2010 Doc ID 17391 Rev 1 1/9
STTH4R02-YAutomotive ultrafast recovery diode
Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature AEC-Q101 qualified
DescriptionThe STTH4R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged SMB, SMC, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection in automotive
applications.
Table 1. Device summary
Characteristics STTH4R02-Y
2/9 Doc ID 17391 Rev 1
1 Characteristics
o evaluate the conduction losses use the following equation:
P = 0.67 x IF(AV) + 0.04 IF2 (RMS)
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Table 3. Thermal parameters
Table 4. Static electrical characteristics Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
Table 5. Dynamic characteristics
STTH4R02-Y Characteristics
Doc ID 17391 Rev 1 3/9
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMB)
Figure 5. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMC)
Figure 6. Junction capacitance versus
reverse applied voltage
(typical values)
Characteristics STTH4R02-Y
4/9 Doc ID 17391 Rev 1
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
Figure 8. Reverse recovery time versus dIF/dt
(typical values)
Figure 9. Peak reverse recovery current
versus dIF /dt (typical values)
Figure 10. Dynamic parameters versus
junction temperature
Figure 11. Thermal resistance, junction to
ambient, versus copper surface
under tab - SMB
Figure 12. Thermal resistance, junction to
ambient, versus copper surface
under tab - SMC
STTH4R02-Y Ordering information scheme
Doc ID 17391 Rev 1 5/9 Ordering information scheme
Figure 13. Ordering information scheme
Package information STTH4R02-Y
6/9 Doc ID 17391 Rev 1
3 Package information Epoxy meets UL94, V0 Band indicates cathode on SMB and SMC
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Figure 14. Footprint, dimensions in mm (inches)
Table 6. SMB dimensions
